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Transformation of the band structure and anisotropy phenomena in 2D hole gas at GaAs/AlGaAs heterointerface under uniaxial compressionстатья
- Авторы: Bogdanov E.V., Kolokolov K.I., Minina N.Ya
- Сборник: Reviews and short notes to NANOMEETING-2013. Minsk, Belarus, 28 - 31 May, 2013
- Год издания: 2013
- Место издания: World Scientific Pub. Co. Pte. Ltd Singapore Singapore
- Первая страница: 28
- Последняя страница: 31
- Аннотация: By numerical calculation the Fermi surface of 2D holes at p-GaAs/AlGaAs heterointerface is found to become strongly anisotropic under uniaxial compression. This uniaxial stress induced anisotropy of the energy spectrum reveals in experimentally detected 2-3 times increase of 2D hole mobility anisotropy (at uniaxial compression about 5 kbar). It leads also to considerable anisotropy of far-infrared absorption.
- Добавил в систему: Богданов Евгений Владимирович