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Tribological characteristics of bulk (2 ̅01) β-Ga2O3 substrate crystals grown by EFGстатья
Статья опубликована в журнале из списка RSCI Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Butenko P.N., Boiko M.E., Chikiryaka A.V., Guzilova L.I., Pozdnyakov A.O., Almaev A.V., Sharkov M.D., Nikolaev V.I.
- Журнал: Materials Physics and Mechanics
- Том: 2023
- Номер: 51
- Год издания: 2023
- Издательство: Федеральное государственное бюджетное учреждение науки Институт проблем машиноведения Российской академии наук
- Местоположение издательства: Санкт-Петербург
- Первая страница: 153
- Последняя страница: 161
- DOI: 10.18149/MPM.5162023_13
- Аннотация: The tribological and mechanical tests of bulk substate crystals of gallium oxide β-polymorph grown by the EFG technique were carried out. The correlation of coefficient of friction and wear coefficient with hardness is discussed. It is shown that the smooth, epi-ready surface of (-201) Ga2O3 samples has an extremely low resistance to abrasion by a sapphire ball. At the same time, the surface of the β-Ga2O3 wafer that has not undergone a complete post-growth processing cycle has high mechanical properties. It is pointed out that this difference can be due to deformation defects, which are entered into the subsurface layers during the mechanical impact on the semiconductor material.
- Добавил в систему: Бойко Михаил Евгеньевич