Аннотация:The transport properties of a nanobridge superconducting quantum interference device made of Al/Pt bilayer have been studied. Measurement and approximation of the voltage-field dependencies allow to estimate the inductance of the structure. It is found that this value significantly exceeds the expected geometric inductance and exhibits an atypical temperature dependence. To explain this effect, a microscopic model of electron transport in SN bilayers is developed, considering the proximity effect, and the available regimes of the current distribution are described. The measured properties may be indicative of the formation of high-resistance aluminum with high values of kinetic inductance during the fabrication of Al/Pt bilayers.
