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Статьи в журналах
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- 1983 CHARACTERISTICS OF FORMATION OF DEFECTS, AND OF THE SPATIAL-DISTRIBUTION AND LOCALIZATION OF AS ATOMS IMPLANTED IN SILICON UNDER CHANNELING CONDITIONS AT AN ELEVATED-TEMPERATURE
- GALKIN GN, DRAVIN VA, EPIFANOV MS, KULIKAUSKAS VS, KHAMDOKHOV ZM
- в журнале Soviet Physics Semiconductors-Ussr, том 17, № 12, с. 1370-1372