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Статьи в журналах
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- 2010 LDD and Back-Gate Engineering for Fully Depleted Planar SOI Transistors with Thin Buried Oxide
- Yan Ran, Duane Russell, Razavi Pedram, Afzalian Aryan, Ferain Isabelle, Lee Chi-Woo, Akhavan Nima Dehdashti, Nguyen Bich-Yen, Bourdelle Konstantin K., Colinge Jean-Pierre
- в журнале IEEE Transactions on Electron Devices, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 57, № 6, с. 1319-1326 DOI